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It is known that the spontaneous emission of semiconductor quantum dots is mostly unpolarized when they are excited off-resonantly. The complete loss of polarization memory is associated with the ultrafast carrier scattering, leading to complete spin polarization relaxation. We study the application of metal-oxide plasmonic double-junction structures to transfer the excitation polarization memory of quantum dots to their spontaneous emission. These structures consist of arrays of metallic nanoantennas in the presence of heterostructures consisting of Au/Si Schottky junctions and Si/Al-oxide charge barriers. Our results show that by using such double-junction structures, one can control the states of polarization and intensity of the emission of quantum dots using the state of polarization of an off-resonant laser field. For achieving this, we explore the optical control of exciton–plasmon coupling using optical lattice modes caused by the arrays of metallic nanoantennas, and the application of the electrostatic field generated by the hot electrons captured at the Au/Si Schottky junction. 

Plasmonic nanostructures and metasurfaces are appealing hosts for investigation of novel optical devices and exploration of new frontiers in physical/optical processes and materials research. Recent studies have shown that these structures hold the promise of greater control over the optical and electronic properties of quantum emitters, offering a unique horizon for ultra-fast spin-controlled optical devices, quantum computation, laser systems, and sensitive photodetectors. In this Perspective, we discuss how heterostructures consisting of metal oxides, metallic nanoantennas, and dielectrics can offer a material platform wherein one can use the decay of plasmons and their near fields to passivate the defect sites of semiconductor quantum dots while enhancing their radiative decay rates. Such a platform, called functional metal-oxide plasmonic metasubstrates (FMOPs), relies on formation of two junctions at very close vicinity of each other. These include an Au/Si Schottky junction and an Si/Al oxide charge barrier. Such a double junction allows one to use hot electrons to generate a field-passivation effect, preventing migration of photo-excited electrons from quantum dots to the defect sites. Prospects of FMOP, including impact of enhancement exciton–plasmon coupling, collective transport of excitation energy, and suppression of quantum dot fluorescence blinking, are discussed.